Process for forming CMOS devices using removable spacers

Details Process for forming CMOS devices using removable spacers Process for forming CMOS devices using removable spacers

2004-11-12

2009-06-09

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000, C438S585000, C438S305000

Reexamination Certificate

active

07544556

ABSTRACT:
A process for forming CMOS devices is disclosed in which disposable spacers are used to obtain a structure having improved gap-fill characteristics. First, gate film stacks are formed on the substrate. A shallow implant process is performed so as to form shallow source/drain implant regions. A layer of oxide and a layer of silicon nitride are deposited and etched to form a first set of spacers that extend on opposite sides of the gate film stacks. A second implant is performed so as to form intermediate source/drain implant regions. A set of disposable spacers are then formed that extend on opposite sides of each of the gate film stacks. A third implant process is performed so as to form deep source/drain implant regions. The disposable spacers are then removed, providing more space for the subsequently-formed contact to land.

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patent: 6294480 (2001-09-01), Pradeep et al.
patent: 2006/0019456 (2006-01-01), Bu et al.

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