Method for fabricating thermally stable contacts with a diffusio

Details Method for fabricating thermally stable contacts with a diffusio Method for fabricating thermally stable contacts with a diffusio

1997-08-28

1999-06-15

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438649, 438653, 438655, 438656, 438660, 438663, 438664, 438680, 438682, 438683, 438927, H01L 214763

Patent

active

059131454

ABSTRACT:
In order to provide a thermally stable diffusion barrier for a contact, a layer of titanium is formed on the patterned substrate. A layer of tungsten nitride is formed on the titanium layer. After an annealing step, an interfacial layer and a layer of titanium nitride are formed between the substrate and a tungsten layer. These layers provide a diffusion barrier which is more thermally stable than a titanium nitride layer applied directly on the substrate and permits the formation of a contact structures that can withstand subsequent high temperature steps.

REFERENCES:
patent: 4816424 (1989-03-01), Watanabe et al.
patent: 5047367 (1991-09-01), Wei et al.
patent: 5567652 (1996-10-01), Nishio
patent: 5710070 (1998-01-01), Chan

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