Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-08-25

2009-02-17

Pizarro, Marcos D (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S139000, C438S166000, C438S295000, C438S479000, C438S481000, C257S347000, C257SE21561, C257SE21570, C257S369000

Reexamination Certificate

active

07491609

ABSTRACT:
A semiconductor device includes a gate electrode formed on a semiconductor layer, source and drain layers formed in the semiconductor layer and disposed on both sides of the gate electrode, and a field plate disposed at the back of the semiconductor layer with an insulating layer provided therebetween.

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Sakai, et al, “Separation by Bonding Si Islands (SBSI) for LSI Applications”; Second International SiGe Technology and Device Meeting, May 2004, pp. 230-231.

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