Method of forming floating gate array of flash memory device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S142000, C438S238000, C438S257000, C438S258000, C438S268000, C257SE21682

Reexamination Certificate

active

07605036

ABSTRACT:
The method of forming a floating gate array of a flash memory device includes: (a) forming a plurality of device isolations, which define active device regions, in a semiconductor substrate, the device isolations being formed such that upper portions thereof protrude from a surface of the substrate by a predetermined height; (b) forming tunnel oxide layers in the active device regions; (c) forming a floating gate-forming layer throughout an entire region of the substrate, including regions in which the plurality of device isolations and the active device regions are formed, the floating gate-forming layer being formed such that grooves are formed along the active device regions; (d) filling the grooves formed on the floating gate-forming layer with masking materials; and (e) patterning the floating gate-forming layer, using the masking materials filling the grooves as an etching mask.

REFERENCES:
patent: 6309926 (2001-10-01), Bell et al.
patent: 6475894 (2002-11-01), Huang et al.

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