Method of making a self-aligned silicide

Details Method of making a self-aligned silicide Method of making a self-aligned silicide

1997-06-26

1999-06-15

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438299, 438683, 438592, H01L 21336

Patent

active

059131241

ABSTRACT:
A method of making a self-aligned silicide which has an impurity diffusion region in a lower part of the source/drain regions adjacent to the isolating region. The method includes performing an ion implantation operation at a large tilt angle, which increases the junction depth of the source/drain regions and prevents the metallic silicide lying at the edge of the isolating region from getting too close to the source/drain junction and causing unwanted current leakages. The isolating regions are overetched, which exposes the surface of the source/drain regions. The metal silicide layer can thus be formed over the exposed source/drain surfaces, resulting in more surface area for the formation of a wide border contact window, resulting in a lowering of both contact resistance and sheet resistance there.

REFERENCES:
patent: 5534449 (1996-07-01), Dennison et al.
patent: 5580799 (1996-12-01), Funaki
patent: 5674764 (1997-10-01), Liu et al.
patent: 5683921 (1997-11-01), Nishio et al.
patent: 5686324 (1997-11-01), Wang et al.
patent: 5759901 (1998-06-01), Loh et al.
patent: 5793090 (1998-08-01), Gardner et al.
patent: 5811340 (1998-09-01), Park
patent: 5814545 (1998-09-01), Seddon et al.
Wolf et al., "Silicon Processing For The VLSI Era", vol. I, Lattice Press, 1986, pp. 292-294, 1986.
Wolf et al., "Silicon Processing For The VLSI Era", vol. II, Lattice Press, 1990, pp. 273-276, 1990.

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