Split gate type non-volatile memory device

Details Split gate type non-volatile memory device Split gate type non-volatile memory device

2006-12-27

2009-08-11

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C257SE21682

Reexamination Certificate

active

07572702

ABSTRACT:
Embodiments relate to a gate structure of a split gate-type non-volatile memory device and a method of manufacturing the same. In embodiments, the split gate-type non-volatile memory device may include a device isolation layer formed on a semiconductor substrate in the direction of a bit line to define an active region, a pair of first conductive layer patterns formed on the active region, a charge storage layer interposed between the pair of first conductive layer patterns and the active region, a pair of second conductive layer pattern formed on the active region and extended along the one sidewalls of the pair of first conductive layer patterns in the direction parallel to a word line, and a gate insulating layer interposed between the pair of second conductive layer patterns and the active region. The pair of second conductive layer patterns may be formed on one sidewalls of the pair of first conductive layer patterns in the form of spacers.

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