Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-02
2009-10-27
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S585000, C438S183000, C257SE21625
Reexamination Certificate
active
07608498
ABSTRACT:
A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
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Watanabe et al., “Impact of Hf Concentration on Performance and Reliability for HfSiON-CMOSFET,” IEDM Tech. Dig. (Dec. 2004), pp. 507-510.
Aoyama Tomonori
Kobayashi Takuya
Sekine Katsuyuki
Tomita Hiroshi
Chen Jack
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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