Method of manufacturing a ferroelectric semiconductor device...

Details Method of manufacturing a ferroelectric semiconductor device... Method of manufacturing a ferroelectric semiconductor device...

2006-10-27

2009-10-13

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S306000

Reexamination Certificate

active

07601585

ABSTRACT:
In pattern-forming ferroelectric capacitor structures by a one mask etching, after an Ir film to be a lower electrode film is formed, an AlOxfilm to be an oxide reduction film reducing an Ir oxide which is formed on a surface layer of the lower electric film is deposited on the lower electrode film, and then this oxide reduction film is removed by, for example, a dilute hydrofluoric acid treatment.

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D. Lide, CRC Handbook of Chemistry and Physics, 2007, CRC Press/Taylor & Francis, 88th Edition, pp. 10.202-10.204.

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