Process of forming an electronic device including fins and...

Details Process of forming an electronic device including fins and... Process of forming an electronic device including fins and...

2007-01-24

2009-08-11

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S156000, C438S243000, C438S245000, C438S258000, C438S259000, C438S261000, C438S287000, C257SE21679

Reexamination Certificate

active

07572699

ABSTRACT:
An electronic device can include a substrate including a fin lying between a first trench and a second trench, wherein the fin is no more than approximately 90 nm wide. The electronic device can also include a first gate electrode within the first trench and adjacent to the fin, and a second gate electrode within the second trench and adjacent to the fin. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements and a second set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between the first gate electrode and the fin, and the second set of the discontinuous storage elements lies between the second gate electrode and the fin. Processes of forming and using the electronic device are also described.

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