Non-volatile memory devices and methods of forming...

Details Non-volatile memory devices and methods of forming... Non-volatile memory devices and methods of forming...

2006-05-31

2009-10-06

Rose, Kiesha L (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29129, C257SE29300, C438S257000, C438S211000

Reexamination Certificate

active

07598564

ABSTRACT:
A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or oxygen. With the barrier spacer layer, a cleaning process using a high-power cleaning solution may be used to effectively remove etch byproducts. An oxidation process may be performed to cure etch damage of an intergate dielectric pattern, a floating gate and a gate insulator. The barrier spacer and/or the oxidation process enable a non-volatile memory device having enhanced speed and reliability to be formed.

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