Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-02
1999-05-25
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438592, 438685, 438648, 438656, 438655, 438683, H01L 214763
Patent
active
059077891
ABSTRACT:
A method and an apparatus for making devices with low barrier height. In fabricating an n-channel and p-channel devices, hemisphere grains, silicon crystal grains and metal silicide crystal grains are formed on a contact-hole or a gate electrode on an insulating film in each semiconductor element, so that it becomes possible to control the work function, to reduce the contact resistance, and to control the threshold voltage V.sub.th.
REFERENCES:
patent: 3830657 (1974-08-01), Farrar
patent: 5084413 (1992-01-01), Fujita et al.
patent: 5087296 (1992-02-01), Kondo et al.
patent: 5094697 (1992-03-01), Takabayashi et al.
patent: 5112773 (1992-05-01), Tuttle
patent: 5177569 (1993-01-01), Koyama et al.
patent: 5198389 (1993-03-01), van der Putten et al.
patent: 5254481 (1993-10-01), Nishida
patent: 5445982 (1995-08-01), Hwang
patent: 5554566 (1996-09-01), Lur et al.
patent: 5705845 (1998-01-01), Fujii
Kakumu et al., "Lightly Impurity Doped (LD) Mo Silicide Gate Technology", Abstract of IEDM, pp. 415 (15.5), 1985.
Niebling John F.
Sony Corporation
Zarneke David A
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