Method of manufacturing non-volatile memory device

Details Method of manufacturing non-volatile memory device Method of manufacturing non-volatile memory device

2007-06-29

2009-12-22

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S595000, C257SE21680, C257SE29129

Reexamination Certificate

active

07635629

ABSTRACT:
A method of manufacturing a non-volatile memory device includes forming a conductive layer to form a gate on a semiconductor substrate; forming a hard mask over the conductive layer; patterning the hard mask and the conductive layer of a cell region to form the gate; partially recessing the hard mask using a mask through which a peripheral region is opened; and patterning the recessed hard mask and the conductive layer of the peripheral region to form the gate.

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