Method of fabricating the high-density diode-based read-only mem

Details Method of fabricating the high-density diode-based read-only mem Method of fabricating the high-density diode-based read-only mem

1997-08-06

1999-05-25

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438130, 438587, H01L 218246

Patent

active

059077786

ABSTRACT:
A method is provided for fabricating a read-only memory (ROM) device of the type including an array of diode-based memory cells for permanent storage of binary-coded data. The ROM device is partitioned into a memory division and an output division. The memory cells are formed over an insulating layer in the memory division. The insulating layer separates the memory cells from the underlying substrate such that the leakage current that can otherwise occur therebetween can be prevented. Moreover, the coding process is performing by forming contact windows at selected locations rather than by performing ion-implantation as in conventional methods. The fabrication process is thus easy to perform. Since the memory cells are diode-based rather than MOSFET-based, the punch-through effect that usually occurs in MOSFET-based memory cells can be prevented. The diode-based structure also allows the packing density of the memory cells on the ROM device to be dependent on the line width of the polysilicon layers in the ROM device. The feature size of the ROM device is thus dependent on the capability of the photolithographic process.

REFERENCES:
patent: 5480823 (1996-01-01), Hsu
patent: 5512507 (1996-04-01), Yang et al.
patent: 5600171 (1997-02-01), Makihara et al.
patent: 5633187 (1997-05-01), Hsu
patent: 5712203 (1998-01-01), Hsu

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