Semiconductor integrated circuit devices

Details Semiconductor integrated circuit devices Semiconductor integrated circuit devices

2006-11-06

2009-11-03

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27092

Reexamination Certificate

active

07612399

ABSTRACT:
A semiconductor integrated circuit device includes a first interlayer insulation film having a contact therein. The contact has an upper surface and including a void therein having an open upper portion. The device further includes a plasma damage reduction unit including a lower electrode conformably on the void of the contact and on the upper surface of the contact, a dielectric film on the lower electrode, and an upper electrode on the dielectric film. The thickness of the portion of the dielectric film in the void is smaller than the thickness of the portion of the dielectric film on the upper surface of the contact.

REFERENCES:
patent: 6319824 (2001-11-01), Lee et al.
patent: 6541335 (2003-04-01), Iwasa
patent: 6627939 (2003-09-01), Yamaguchi
patent: 6815771 (2004-11-01), Kimura et al.
patent: 6869877 (2005-03-01), Rhodes et al.
patent: 2006/0163639 (2006-07-01), Ogawa
patent: 01-274028 (1989-11-01), None
patent: 1020040086701 (2004-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4084268