Semiconductor device and methods for forming the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27102

Reexamination Certificate

active

07602004

ABSTRACT:
A semiconductor device includes a first transistor and a second transistor formed on a substrate. Each of the first transistor and the second transistor has a first source region, first drain region of a first conductivity type and a gate. The first transistor is an off-transistor and includes a second source/drain region of the first conductivity type which surrounds at least a portion of the first source/drain region in the first transistor.

REFERENCES:
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patent: 6133101 (2000-10-01), Wu
patent: 6207999 (2001-03-01), Wu
patent: 6323091 (2001-11-01), Lee et al.
patent: 6380044 (2002-04-01), Talwar et al.
patent: 2002/0052083 (2002-05-01), Zhang et al.
patent: 2004-079895 (2004-03-01), None
patent: 1998 05450-8 (1998-09-01), None
patent: 100213237 (1999-05-01), None
patent: 2002 0002012 (2002-01-01), None
German Office Action for Patent Application No. 10 2006 051 290.1-33; dated Jan. 29, 2008.
English Abstract for Publication No. 1998-054508.
English Abstract for Publication No. 1020020002012.

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