Structure and method to form multilayer embedded stressors

Details Structure and method to form multilayer embedded stressors Structure and method to form multilayer embedded stressors

2006-06-09

2009-11-17

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S282000, C438S289000, C438S596000, C438S221000, C438S423000, C257SE21358, C257SE21541

Reexamination Certificate

active

07618866

ABSTRACT:
A multilayer embedded stressor having a graded dopant profile for use in a semiconductor structure for inducing strain on a device channel region is provided. The inventive multilayer stressor is formed within areas of a semiconductor structure in which source/drain regions are typically located. The inventive multilayer stressor includes a first conformal epi semiconductor layer that is undoped or lightly doped and a second epi semiconductor layer that is highly dopant relative to the first epi semiconductor layer. The first and second epi semiconductor layers each have the same lattice constant, which is different from that of the substrate they are embedded in. The structure including the inventive multilayer embedded stressor achieves a good balance between stress proximity and short channel effects, and even eliminates or substantially reduces any possible defects that are typically generated during formation of the deep source/drain regions.

REFERENCES:
patent: 5264713 (1993-11-01), Palmour
patent: 5442205 (1995-08-01), Brasen et al.
patent: 6323525 (2001-11-01), Noguchi et al.
patent: 6831292 (2004-12-01), Currie et al.
patent: 6844227 (2005-01-01), Kubo et al.
patent: 6921913 (2005-07-01), Yeo et al.
patent: 2004/0262694 (2004-12-01), Chidambaram
patent: 2005/0012146 (2005-01-01), Murthy et al.
patent: 2005/0082522 (2005-04-01), Huang et al.
patent: 2005/0280098 (2005-12-01), Shin et al.
patent: 2006/0022292 (2006-02-01), Shenoy
patent: 2006/0244075 (2006-11-01), Chen et al.
patent: 2006/0244077 (2006-11-01), Nowak
patent: 2006/0252191 (2006-11-01), Kammler et al.
patent: 2007/0020861 (2007-01-01), Chong et al.

Affiliated with

Also associated with

Rating

Structure and method to form multilayer embedded stressors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and method to form multilayer embedded stressors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method to form multilayer embedded stressors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4082194