Semiconductor integrated circuit device and manufacturing...

Details Semiconductor integrated circuit device and manufacturing... Semiconductor integrated circuit device and manufacturing...

2006-01-25

2009-02-24

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S593000, C257SE21422

Reexamination Certificate

active

07494869

ABSTRACT:
A manufacturing method of a semiconductor integrated circuit device is disclosed. A gate insulating film is formed on a semiconductor substrate. A first film used as floating gates is formed on the gate insulating film. Trenches are formed in the substrate through the first film. Insulating materials are embedded in the trenches. The insulating materials are set back at least in a plane direction. Second films used as floating gates are formed between the side walls of the insulating materials without making directly contact with the side walls of the insulating materials. The insulating materials are set back from spaces caused between the insulating materials and the second films.

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patent: 6933194 (2005-08-01), Narita et al.
patent: 7015099 (2006-03-01), Kim et al.
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patent: 7256091 (2007-08-01), Kim et al.
patent: 2001-284556 (2001-10-01), None
patent: 2004-22819 (2004-01-01), None

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