Semiconductor memory device with standby current failure...

Details Semiconductor memory device with standby current failure... Semiconductor memory device with standby current failure...

2004-03-17

2009-06-09

Beausoliel, Robert (Department: 2113)

Error detection/correction and fault detection/recovery

Data processing system error or fault handling

Reliability and availability

C714S005110, C714S006130, C714S006130, C714S006130, C714S030000

Reexamination Certificate

active

07546491

ABSTRACT:
A semiconductor memory device which a pad for receiving a power voltage, a first power line connected to the pad, and a plurality of second power lines respectively connected to memory cells of a repair unit. A selection circuit outputs selection signals for selecting the memory cells of the array in the repair unit in response to a row address in a test operation mode. A power switch circuit operates in response to the selection signals, and connects the second power line connected to the selected memory cells with the first power line in the test operation mode. The power switch circuit disconnects the remaining second power lines from the first power line.

REFERENCES:
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patent: 5970008 (1999-10-01), Zagar et al.
patent: 5987632 (1999-11-01), Irrinki et al.
patent: 2002/0167849 (2002-11-01), Ohbayashi et al.
patent: 02222922 (2002-09-01), None
“Transistor” Microsoft Computer Dictionary (fifth edition). Copyright 2002. Microsoft Press.
English Abstract.

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