Method of manufacturing semiconductor device and...

Details Method of manufacturing semiconductor device and... Method of manufacturing semiconductor device and...

2009-01-05

2009-11-24

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S246000, C438S270000, C438S289000, C438S700000, C257S330000, C257S331000, C257S334000, C257S341000, C257S342000, C257SE21040, C257SE21410

Reexamination Certificate

active

07622351

ABSTRACT:
A method of manufacturing a semiconductor device, includes: forming a first and a second trench regions adjacent from each other in a first conductivity type semiconductor base; forming a second conductivity type semiconductor region in the semiconductor base between the first and second trench regions; forming a mask on the second conductivity type semiconductor region, the mask covering a central portion between the first and second trench regions; performing ion implantation of a first conductivity type impurity in the second conductivity type semiconductor region with the mask to form a first conductivity type first region and a first conductivity type second region separated from the first conductivity type first region; and performing heat treatment to diffuse the impurity in the first and second regions and to form a connection region between the first and second regions, connection region being shallower than the first and second regions after the heat treatment.

REFERENCES:
patent: 6204533 (2001-03-01), Williams et al.
patent: 6534367 (2003-03-01), Peake et al.
patent: 2000-031484 (2000-01-01), None

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