Semiconductor package with a chip on a support plate

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond

Reexamination Certificate

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C257S787000, C257SE23020

Reexamination Certificate

active

07573141

ABSTRACT:
A semiconductor package includes a support plate made of an electrically non-conducting material. Electrical connection vias are formed outside a chip fixing region provided on the front face of the support plate. Electrical connection wires connect pads on a front of the chip to pads on the front of the support plate associated with the electrical connection vias. The front face of the support plate is further provided with at least one intermediate front layer made of a thermally conducting material extending at least partly below the chip. The rear face of the support plate is provided with at least one rear layer made of a thermally conducting material extending at least partly opposite the front layer. The front and rear layers are connected by vias made of a thermally conducting material that fills through-holes made through the plate.

REFERENCES:
patent: 5285352 (1994-02-01), Pastore et al.
patent: 5409863 (1995-04-01), Newman
patent: 5583377 (1996-12-01), Higgins, III
patent: 5592025 (1997-01-01), Clark et al.
patent: 5741729 (1998-04-01), Selna
patent: 6191477 (2001-02-01), Hashemi
patent: 6282094 (2001-08-01), Lo et al.
patent: 6521990 (2003-02-01), Roh
patent: 6605353 (2003-08-01), Okada et al.
patent: 6861750 (2005-03-01), Zhao et al.
patent: 2002/0185722 (2002-12-01), Zhao
Preliminary French Search Report, FR 0312307, dated May 25, 2004.

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