Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-09-29
2009-06-30
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S128000, C438S152000, C257S059000, C257S072000, C257S202000, C257SE51005, C257SE27111, C257SE29151
Reexamination Certificate
active
07553708
ABSTRACT:
A liquid crystal display having an applied horizontal electric field comprising: a gate line; a common line substantially parallel to the gate line; a data line arranged to cross the gate line and the common line to define a pixel area; a thin film transistor formed at each crossing of the gate line and the data line; a common electrode formed in the pixel area and connected to the common line; a pixel electrode connected to the thin film transistor, wherein the horizontal electric field is formed between the pixel electrode and the common electrode in the pixel area; a gate pad formed with at least one conductive layer included in the gate line; a data pad formed with at least one conductive layer included in the data line; a common pad formed with at least one conductive layer included in the common line; a passivation film to expose at least one of the gate pad, the data pad and the common pad; and a driving integrated circuit mounted on a substrate to connect directly to one of the gate pad and the data pad.
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Ahn Byung Chul
Lim Byoung Ho
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Sefer A.
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