Semiconductor memory having a precharge voltage generation...

Details Semiconductor memory having a precharge voltage generation... Semiconductor memory having a precharge voltage generation...

2006-10-13

2009-08-25

Hidalgo, Fernando N (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S211000, C365S189090, C365S227000

Reexamination Certificate

active

07580303

ABSTRACT:
A precharge voltage generating circuit outputs any of a plurality of kinds of precharge voltages in accordance with an ambient temperature. A precharge circuit supplies the precharge voltage to a bit line during the nonaccess of a dynamic memory cell. A sense amplifier amplifies a difference between the voltage of a data signal read from the dynamic memory cell onto the bit line and the supplied precharge voltage. The precharge voltage is altered in accordance with the ambient temperature, whereby the read margin of the sense amplifier can be changed, and the worst value of the data retaining time of the memory cell can be improved. As a result, the frequency of refreshing of the memory cell can be lowered, reducing power consumption and a standby current.

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