Method of forming low resistance void-free contacts

Details Method of forming low resistance void-free contacts Method of forming low resistance void-free contacts

2005-12-06

2009-11-10

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S675000, C257SE21680

Reexamination Certificate

active

07615448

ABSTRACT:
A plug is formed by depositing a first material to partially fill an opening, leaving an unfilled portion with a lower aspect ratio than the original opening. A second material is then deposited to fill the remaining portion of the opening. The first material has good filling characteristics but has higher resistivity than the second material. The second material has low resistivity to give the plug low resistance.

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