Recycling by mechanical means of a wafer comprising a...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor

Reexamination Certificate

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C257S098000, C257S432000, C257SE21122, C257SE21568, C438S455000

Reexamination Certificate

active

07602046

ABSTRACT:
The invention relates to a recyclable donor wafer that includes a substrate and a formed layer thereon, wherein the formed layer has a thickness sufficient to provide (a) at least two useful layers for detachment therefrom and (b) additional material that can be removed to planarize exposed surfaces of the useful layers prior to detachment from the donor wafer.

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