Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2005-03-07
2009-10-13
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257S098000, C257S432000, C257SE21122, C257SE21568, C438S455000
Reexamination Certificate
active
07602046
ABSTRACT:
The invention relates to a recyclable donor wafer that includes a substrate and a formed layer thereon, wherein the formed layer has a thickness sufficient to provide (a) at least two useful layers for detachment therefrom and (b) additional material that can be removed to planarize exposed surfaces of the useful layers prior to detachment from the donor wafer.
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Akatsu Takeshi
Aulnette Cécile
Faure Bruce
Ghyselen Bruno
Osternaud Bénédite
Coleman W. David
Kim Su C
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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