Semiconductor device including bipolar junction transistor...

Details Semiconductor device including bipolar junction transistor... Semiconductor device including bipolar junction transistor...

2007-04-27

2009-08-04

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S234000, C257SE27032

Reexamination Certificate

active

07569448

ABSTRACT:
A method of manufacturing a CMOS-BJT semiconductor device comprises the steps of: forming a collector region of a first conductivity type and a first well of the first conductivity type, simultaneously in a semiconductor substrate; forming a second well of a second conductivity type opposite to said first conductivity type, in the semiconductor substrate; forming a base region of the second conductivity type in the collector region; forming first and second insulated gate structure on said first and second wells, and a junction protection structure having same constituent elements as said insulated gate structures on said base region; and forming second source/drain regions of the first conductivity type in said second well, and an emitter region of the first conductivity type in the base region, simultaneously, with an emitter-base junction reaching the principal surface below said junction protection structure.

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Hitosho Okamura, et al.., “BiCMOS Embedded Gate Array QB-8E,” NEC, vol. 49, No. 3, 1996.

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