MOS devices with corner spacers

Details MOS devices with corner spacers MOS devices with corner spacers

2006-05-16

2009-02-24

Pizarro, Marcos D. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S344000, C257SE23103

Reexamination Certificate

active

07495280

ABSTRACT:
A MOS device having corner spacers and a method for forming the same are provided. The method includes forming a gate structure overlying a substrate, forming a first dielectric layer over the gate structure and the substrate, forming a second dielectric layer on the first dielectric layer, forming a third dielectric layer on the second dielectric layer, and etching the first, the second and the third dielectric layers using the third dielectric layer as a mask. The remaining first and second dielectric layers have an L-shape. The method further includes implanting source/drain regions, removing remaining portions of the third dielectric layer, blanket forming a fourth dielectric layer, etching the fourth dielectric layer, siliciding exposed source/drain regions, and forming a contact etch stop layer. The remaining portion of the fourth dielectric layer forms corner spacers.

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Augendre, E., et al., “Thin L-shaped spacers for CMOS devices,” IEEE, 2003, pp. 219-222.

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