Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-01-06
2009-02-24
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C438S162000, C438S479000, C438S520000, C438S528000
Reexamination Certificate
active
07494852
ABSTRACT:
A method of forming a surface Ge-containing channel which can be used to fabricate a Ge-based field effect transistor (FET) which can be applied to semiconductor-on-insulator substrates (SOIs) is provided. The disclosed method uses Ge-containing ion beams, such as cluster ion beams, to create a strained Ge-containing rich region at or near a surface of a SOI substrate. The Ge-containing rich region can be present continuously across the entire surface of the semiconductor substrate, or it can be present as a discrete region at a predetermined surface portion of the semiconductor substrate.
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Proc. IEEE, vol. 89, No. 3, Mar. 2001.
Bedell Stephen W.
Doris Bruce B.
Sadana Devendra K.
Cai Yuanmin
Duong Khanh B
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Smith Zandra
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