Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-29
2009-06-23
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S279000, C438S597000
Reexamination Certificate
active
07550350
ABSTRACT:
The present disclosure relates to methods of forming a flash memory device. A plurality of cells, a plurality of select transistors, and a transistor are formed over a semiconductor substrate including a cell region and a peripheral region. An insulating layer is formed on the entire surface. Metal contact holes are etched and filled with a metal contact layer. Drain contact holes are also etched and filled with a drain contact layer. The order of the metal contact layer formation and drain contact layer formation can be reversed. A single chemical mechanical polishing step is performed to remove the top portions of the metal and drain contact layers, thereby exposing the top surface of the interlayer insulating layer and simultaneously forming both the metal and drain contacts.
REFERENCES:
patent: 2003/0203605 (2003-10-01), Mori et al.
patent: 1019970072090 (1997-07-01), None
patent: 1020030001969 (2003-01-01), None
patent: 1020030002630 (2003-01-01), None
patent: 1020040080599 (2004-09-01), None
patent: 1020050108141 (2005-11-01), None
patent: 1020060108035 (2006-10-01), None
patent: 1020070058112 (2007-06-01), None
Chen Jack
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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