Semiconductor memory device having metallization comprising...

Details Semiconductor memory device having metallization comprising... Semiconductor memory device having metallization comprising...

2007-01-19

2009-10-13

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S208000, C257S758000, C257SE29298, C257SE23173, C365S185170

Reexamination Certificate

active

07601998

ABSTRACT:
A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

REFERENCES:
patent: 6501127 (2002-12-01), Mori
patent: 2005/0179061 (2005-08-01), Jang et al.
patent: 2006/0028861 (2006-02-01), Han et al.
patent: 2000-049351 (2000-02-01), None
patent: 2005-0073956 (2005-07-01), None
patent: 2006-0012847 (2006-02-01), None

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