Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-02-05
2009-10-20
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S202000, C365S189090, C365S189080, C365S229000, C365S227000
Reexamination Certificate
active
07606095
ABSTRACT:
A precharge voltage supply circuit and a semiconductor memory device using the same are described. The precharge voltage supply circuit includes a first voltage supplier configured to reduce a precharge voltage and supply the reduced precharge voltage in response to a power down mode signal that is activated in a power down mode, a second voltage supplier configured to supply a power voltage in a predetermined section from a point of time when exiting the power down mode, and a third voltage supplier configured to supply the precharge voltage after a lapse of the predetermined section.
REFERENCES:
patent: 7230866 (2007-06-01), Kim
patent: 7474143 (2009-01-01), Sato et al.
patent: 2007/0247938 (2007-10-01), Miller et al.
patent: 2009/0109775 (2009-04-01), Hwang
patent: 10-2004-0037915 (2004-05-01), None
patent: 10-2006-0082978 (2006-07-01), None
patent: 10-0665854 (2007-01-01), None
Cooper & Dunham LLP
Hynix / Semiconductor Inc.
Tran Andrew Q
White John P.
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