Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-03-30
2009-12-22
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S775000, C257SE21267
Reexamination Certificate
active
07635655
ABSTRACT:
A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N2O-based oxidation process for the substrates including a first process gas containing N2O that thermally decomposes in a process chamber of the batch processing system to N2, O2, and NO byproducts, and generating a replacement NO-based oxidation process for the substrates including a second process gas containing N2, O2, and NO with molar concentrations that mimic that of the N2, O2, and NO byproducts in the N2O-based oxidation process. According to another embodiment of the invention, the NO-based oxidation process contains NO, O2, and an inert gas.
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Kebede Brook
Tokyo Electron Limited
Wood Herron & Evans LLP
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