Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2005-07-18
2009-06-30
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S763000, C438S689000
Reexamination Certificate
active
07553775
ABSTRACT:
The present invention provides a method for coating a group4semiconductor surface composed mainly of a group4semiconductor elements and a process for producing group4semiconductor particles having a luminescent capability and semiconductor particles and a semiconductor element produced thereby. The method for coating a semiconductor surface according to the present invention comprises the steps of: providing a semiconductor material comprising a group4element selected from the group consisting of silicon, germanium, carbon, and tin; reacting the surface of the semiconductor material with an inert organic solvent-soluble and electron-donating reducing agent in the inert organic solvent to coat the surface of the semiconductor material with a metal derived from said reducing agent; and then reacting the surface of the semiconductor material with a compound with an electron withdrawing group, said compound comprising an element selected from the group consisting of group4elements and transition metal elements, to coat the surface of the semiconductor material with the group 4 element or the transition metal element derived from said compound with the electron withdrawing group. The utilization of this method can produce semiconductor particles or a semiconductor element such as a light emitting element and an optical modulator.
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Richard K. Baldwin, et al., “Solution Reduction Synthesis of Surface Stabilized Silicon Nanoparticles”, Chem. Commun., 2002, pp. 1822-1823.
Brown Valerie
Kabushiki Kaisha Toshiba
Nguyen Ha Tran T
Oblon,. Spivak, McClelland, Maier & Neustadt, P.C.
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