Removing a high-k gate dielectric

Details Removing a high-k gate dielectric Removing a high-k gate dielectric

2004-06-30

2009-08-18

Cao, Phat X (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S762000

Reexamination Certificate

active

07575991

ABSTRACT:
A metal oxide layer on a substrate is converted at least partly to a metal layer. At least part of the metal layer is covered by an oxidation resistant cover. The covered layer and underlying metal may be removed, for example, using acid.

REFERENCES:
patent: 6696345 (2004-02-01), Chau et al.
patent: 2005/0104112 (2005-05-01), Haukka et al.
patent: 2007/0172997 (2007-07-01), Yagishita et al.
U.S. Appl. No. 10/652,796, filed Aug. 28, 2003, Justin K. Brask et al.,A Method For Making A Semiconductor Device Having A High-K Gate Dielectric.
U.S. Appl. No. 10/805,880, filed Mar. 22, 2004, Uday Shah et al.,A Method For Making A Semiconductor Device With A Metal Gate Electrode.

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