Method, program product and apparatus for model based...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000, C430S005000, C430S030000

Reexamination Certificate

active

07620930

ABSTRACT:
A method of generating a mask is provided that optimizes the placement and shape of optical proximity correction (OPC) features such as scattering bars. According to some aspects, the method includes model-based techniques for determining where to place assist features within the design, thereby eliminating the need for experienced mask designers to perform OPC, and also substantially reducing the time required to determine an acceptable OPC solution. According to further aspects, the method provides an OPC assist feature placement technique that enhances the resulting depth of focus even when imaging features have dimensions on the order of a quarter of the wavelength of the imaging system.

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