Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-12-27

2009-12-15

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S585000, C257S411000, C257SE21625

Reexamination Certificate

active

07632731

ABSTRACT:
A method of fabricating a semiconductor device consistent with the present invention, the method comprising: forming an insulation film on a substrate; forming a mono-atomic layer of barrier ions at the insulation film; forming a gate insulation film in which the barrier ions are stabilized by an annealing process; forming a gate electrode on the gate insulation film; forming a spacer at a side surface of the gate electrode; and forming source/drain impurity regions at a side surface of the gate electrode.

REFERENCES:
patent: 6660657 (2003-12-01), Sandhu et al.
patent: 6858524 (2005-02-01), Haukka et al.
patent: 2005/0045967 (2005-03-01), Sasaki et al.
patent: 2005/0205948 (2005-09-01), Rotondaro et al.
patent: 2006/0051925 (2006-03-01), Ahn et al.
patent: 2006/0148179 (2006-07-01), Wang et al.
patent: 2008/0026553 (2008-01-01), Chua et al.
patent: 2008/0093639 (2008-04-01), Kim

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