Semiconductor devices having nitrogen-incorporated active...

Details Semiconductor devices having nitrogen-incorporated active... Semiconductor devices having nitrogen-incorporated active...

2006-04-04

2009-06-16

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S406000, C257S411000, C257S345000, C257S371000, C257SE21686

Reexamination Certificate

active

07547951

ABSTRACT:
A semiconductor device may include a semiconductor substrate having a first region and a second region. The nitrogen-incorporated active region may be formed within the first region. A first gate electrode may be formed on the nitrogen-incorporated active region. A first gate dielectric layer may be interposed between the nitrogen-incorporated active region and the first gate electrode. The first gate dielectric layer may include a first dielectric layer and a second dielectric layer. The second dielectric layer may be a nitrogen contained dielectric layer. A second gate electrode may be formed on the second region. A second gate dielectric layer may be interposed between the second region and the second gate electrode. The first gate dielectric layer may have the same or substantially the same thickness as the second gate dielectric layer, and the nitrogen contained dielectric layer may contact with the nitrogen-incorporated active region.

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Taiwanese Notice of Allowance dated Jan. 11, 2008 with partial English translation.

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