Structure and method for creation of a transistor

Details Structure and method for creation of a transistor Structure and method for creation of a transistor

2006-10-05

2009-06-23

Luu, Chuong Anh (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S312000, C438S232000

Reexamination Certificate

active

07550351

ABSTRACT:
The invention is directed to an improved transistor that reduces dopant cross-diffusion and improves chip density. A first embodiment of the invention comprises gate electrode material partially removed at a junction of a first gate electrode region comprised of gate material doped with first ions for a first device and second gate electrode region comprised of gate material doped with second ions for a second device. The respectively doped regions are connected by a silicide layer near the top surface of the gate conductors.

REFERENCES:
patent: 6005013 (1999-12-01), Suh et al.
patent: 6316302 (2001-11-01), Cheek et al.
patent: 6495408 (2002-12-01), Hsia et al.
patent: 6508129 (2003-01-01), Sittler
patent: 6649460 (2003-11-01), Leobandung
patent: 6891192 (2005-05-01), Chen et al.
patent: 6906360 (2005-06-01), Chen et al.
patent: 6939814 (2005-09-01), Chan et al.
patent: 6946709 (2005-09-01), Yang
patent: 2003/0057453 (2003-03-01), Trivedi et al.
patent: 2008/0085585 (2008-04-01), Yang et al.

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