Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-09-01
2009-06-16
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257SE29260, C257S401000
Reexamination Certificate
active
07547945
ABSTRACT:
The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region is formed within the semiconductor substrate and extends generally perpendicularly relative to the upper surface of the semiconductor substrate. A gate is formed within the semiconductor substrate between the pair of the source/drain regions.
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Allen, III Tuman Earl
Brown Kris K.
Haller Gordon
Tang Sanh D.
Ho Tu-Tu
Micro)n Technology, Inc.
Wells St. John P.S.
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