Method of manufacturing interconnecting structure with vias

Details Method of manufacturing interconnecting structure with vias Method of manufacturing interconnecting structure with vias

2006-09-18

2009-10-20

Chu, Chris C (Department: 2815)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S618000, C438S637000, C438S638000, C438S666000, C438S668000, C257SE23145, C257S774000

Reexamination Certificate

active

07605085

ABSTRACT:
First wirings and first dummy wirings are formed in a p-SiOC film formed on a substrate. A p-SiOC film is formed, and a cap film is formed on the p-SiOC film. A dual damascene wiring, including vias connected to the first wirings and the second wirings, is formed in the cap film and the p-SiOC film22. Dummy vias are formed on the periphery of isolated vias.

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