Semiconductor device having MIM capacitive elements and...

Details Semiconductor device having MIM capacitive elements and... Semiconductor device having MIM capacitive elements and...

2007-03-05

2009-02-24

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S250000, C438S620000, C438S508000, C257S296000, C257S751000, C257S758000, C257SE21008

Reexamination Certificate

active

07494867

ABSTRACT:
A method for manufacturing a semiconductor device is provided. The method includes forming a lower interconnection on a semiconductor substrate; forming a first interlayer insulation film in which the lower interconnection is buried; forming an MIM capacitive element on the first interlayer insulation film, the MIM capacitive element being formed by layering a lower electrode, a dielectric film, and an upper electrode; forming a second interlayer insulation film in which the MIM capacitive element is buried; forming via holes in the second interlayer insulation film so as to reach the lower electrode; forming a connection plug by filling the via hole with conductive film; and forming an upper interconnection to be connected to the connection plug above the second interlayer insulation film.

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