Method of manufacturing thin film transistor substrate

Details Method of manufacturing thin film transistor substrate Method of manufacturing thin film transistor substrate

2008-01-16

2009-12-29

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21414, C438S151000

Reexamination Certificate

active

07638375

ABSTRACT:
A method of manufacturing a TFT substrate includes: sequentially forming a transparent conductive layer and an opaque conductive layer on a substrate, patterning the transparent conductive layer and the opaque conductive layer by using a first mask to form a gate pattern including a pixel electrode, and forming a gate insulating layer and a semiconductor layer above the substrate. A contact hole is formed which exposes a portion of the pixel electrode and a semiconductor pattern using a second mask. A conductive layer is formed above the substrate and patterned to form a source/drain pattern including a drain electrode which overlaps a portion of the pixel electrode. Portions of the gate insulating layer and the opaque conductive layer above the pixel electrode are removed except a portion overlapping the drain electrode, by using a third mask.

REFERENCES:
patent: 7098062 (2006-08-01), Shih
patent: 7410817 (2008-08-01), Oh et al.
patent: 2005/0077517 (2005-04-01), Chang et al.

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