Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-01-15

2009-06-02

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S259000, C438S264000, C438S294000, C257SE21209, C257SE21180, C257SE21210

Reexamination Certificate

active

07541233

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.

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Notification of Reasons for Rejection (Office Action) for Japanese Patent Application No. 2003-149335, mailed Jul. 5, 2005, and English translation thereof.

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