Spacer-less low-k dielectric processes

Details Spacer-less low-k dielectric processes Spacer-less low-k dielectric processes

2006-06-05

2009-11-10

Tran, Thien F (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000

Reexamination Certificate

active

07615427

ABSTRACT:
A first example embodiment provides a method of removing first spacers from gates and incorporating a low-k material into the ILD layer to increase device performance. A second example embodiment comprises replacing the first spacers after silicidation with low-k spacers. This serves to reduce the parasitic capacitances. Also, by implementing the low-k spacers only after silicidation, the embodiments' low-k spacers are not compromised by multiple high dose ion implantations and resist strip steps. The example embodiments can improve device performance, such as the performance of a rim oscillator.

REFERENCES:
patent: 6107667 (2000-08-01), An et al.
patent: 6613637 (2003-09-01), Lee
patent: 6724051 (2004-04-01), Woo et al.
patent: 6825529 (2004-11-01), Chidambarrao
patent: 7445978 (2008-11-01), Teh et al.
patent: 2004/0171201 (2004-09-01), Gambino
patent: 2004/0262692 (2004-12-01), Hareland et al.

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