Methods of forming DRAM arrays

Details Methods of forming DRAM arrays Methods of forming DRAM arrays

2005-06-27

2008-12-02

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C257S306000, C257SE21648

Reexamination Certificate

active

07459362

ABSTRACT:
The invention includes a semiconductor construction including rows of contact plugs, and rows of parallel bottom plates. The plug pitch is approximately double the plate pitch. The invention includes a method of forming a semiconductor construction. A plurality of conductive layers is formed over the substrate, the plurality of layers being substantially orthogonal relative to first, second and third rows of contact plugs. An opening is etched which passes through each of the conductive layers within the plurality of conductive layers. The opening is disposed laterally between the first and second row of contact plugs. After etching the opening a dielectric material is deposited over the plurality of conductive layers and a second conductive material is deposited over the dielectric material. The invention includes an electronic system including a processor and a memory operably associated with the processor. The memory device has a memory array which includes double-pitched capacitors.

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