Method for reducing overlap capacitance in field effect...

Details Method for reducing overlap capacitance in field effect... Method for reducing overlap capacitance in field effect...

2007-04-27

2008-11-04

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S595000

Reexamination Certificate

active

07446004

ABSTRACT:
A field effect transistor (FET) device includes a gate conductor formed over a semiconductor substrate, a source region having a source extension that overlaps and extends under the gate conductor, and a drain region having a drain extension that overlaps and extends under the gate conductor only at selected locations along the width of the gate conductor.

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patent: 6255175 (2001-07-01), Yu
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patent: 6573560 (2003-06-01), Shenoy
patent: 6743685 (2004-06-01), Wu et al.
patent: 7161199 (2007-01-01), Chen et al.
patent: 2005/0035408 (2005-02-01), Wang et al.
patent: 2005/0116298 (2005-06-01), Tihanyi

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