Silicon nitride films

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21293

Reexamination Certificate

active

07446063

ABSTRACT:
A method of forming structures comprises depositing silicon nitride films simultaneously on a plurality of substrates at a first temperature, and heating the silicon nitride films at a temperature greater than the first temperature.

REFERENCES:
patent: 6544900 (2003-04-01), Raaijmakers et al.
patent: 6586163 (2003-07-01), Okabe et al.
patent: 6680516 (2004-01-01), Blosse et al.
patent: 6706576 (2004-03-01), Ngo et al.
patent: 6803321 (2004-10-01), Blosse et al.
patent: 2002/0127828 (2002-09-01), Suzuki et al.
patent: 2004/0087090 (2004-05-01), Grudowski et al.
patent: 2004/0102040 (2004-05-01), Adetutu et al.
patent: 2004/0115897 (2004-06-01), Inoue et al.
patent: 2005/0252529 (2005-11-01), Ridgeway et al.
patent: 2006/0073706 (2006-04-01), Li et al.
Encyclopedia of Chemical Technology, Kirk-Othmer, vol. 14, pp. 677-709, (1995).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Silicon nitride films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon nitride films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon nitride films will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4049427

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.