Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-26
2008-11-04
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S151000
Reexamination Certificate
active
07445976
ABSTRACT:
A stack located over a substrate. The stack includes a layer between a dielectric layer and a metal layer. The layer includes a halogen and a metal. In one embodiment, the halogen is fluorine. In one embodiment, the stack is a control electrode stack for a transistor. In one example the control electrode stack is a gate stack for a MOSFET. In one example, the layer includes aluminum fluoride.
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Hegde Rama I.
Samavedam Srikanth B.
Schaeffer James K.
Dolezal David G.
Freescale Semiconductor Inc.
Menz Laura M
Vo Kim-Marie
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