Non-volatile memory device capable of reducing threshold...

Details Non-volatile memory device capable of reducing threshold... Non-volatile memory device capable of reducing threshold...

2006-12-09

2008-12-23

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Signals

C365S189140, C365S185330, C365S185220

Reexamination Certificate

active

07468924

ABSTRACT:
A method for programming a flash memory device which includes a plurality of memory cells arranged in rows and columns. The method includes programming selected memory cells from among the plurality of memory cells according to loaded data bits. Data bits are read from the programmed selected memory cells. It is determined whether each of the programmed memory cells has been successfully programmed based on the results of the reading step. The programming of memory cells that have been determined to have been successfully programmed are inhibited. The programming, reading, determining and inhibiting steps are repeated until each of the selected memory cells has been determined to have been successfully programmed. A memory cell that has been previously determined to have been successfully programmed and inhibited is uninhibited and subsequently re-programmed when it is determined that the previously inhibited memory cell is no longer successfully programmed.

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