Method of forming a semiconductor device having air gaps and...

Details Method of forming a semiconductor device having air gaps and... Method of forming a semiconductor device having air gaps and...

2006-03-28

2008-12-02

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S586000, C438S622000, C438S624000, C257S758000, C257S759000, C257S760000, C257SE21579, C257SE21581

Reexamination Certificate

active

07459389

ABSTRACT:
A method of forming a semiconductor device. Depositing alternating layers of a first and a second dielectric material, wherein the first and second dielectric materials are selectively etchable at different rates. Forming a first feature within the alternating layers of dielectric material. Selectively etching the alternating layers of dielectric material to remove at least a portion of the first dielectric material in each layer having the first dielectric material and leaving the second dielectric material as essentially unetched.

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Kohl, et al.; Air-Gaps for Electrical Interconnections; Electrochemical and Solid-State leters, vol. 1, No. 1, Jul. 1998; pp. 49-51 with cover page.

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