Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-04-14

2008-12-16

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000

Reexamination Certificate

active

07465628

ABSTRACT:
According to an aspect of the invention, there is provided a semiconductor device comprising a capacitor formed above a semiconductor substrate by sandwiching a dielectric film between a lower electrode and an upper electrode including an electrode film which contains an MOxtype conductive oxide (M is a metal element, O is an oxygen element, and x>0), and a contact connected to the upper electrode, wherein a film thickness of the electrode film immediately below the contact is smaller than a film thickness of the electrode film in the other portion.

REFERENCES:
patent: 6649954 (2003-11-01), Cross
patent: 2007/0080382 (2007-04-01), Kikuchi et al.
patent: 11-233734 (1999-08-01), None
patent: 2000-349246 (2000-12-01), None
patent: 2003-174146 (2003-06-01), None

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